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FUNCTIONAL NANOMATERIALS & INTERFACES GROUP

PUBLICATIONS

Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications. Biswajit Jana and Ayan Roy Chaudhuri Chips, 3(3), 235 (2024). 10.3390/chips3030012

Neuromorphic Learning and Recognition in WO3-x Thin Film-based Forming-free Flexible Electronic Synapses. Archana Mohapatra, Chinmayee Mandar Mhaskar, Mousam Sahu, Satyaprakash Sahoo and Ayan Roy Chaudhuri Nanotechnology, 35 (2024). 10.1088/1361-6528/ad6dce

Forming free bipolar resistive switching in SiOx-based flexible MIM devices. Biswajit Jana, Pallavi Gaur, Ayan Roy Chaudhuri. Bull Mater Sci 47, 21 (2024). 10.1007/s12034-023-03094-z

Interference-Modulated Excitonic Reflectance of Monolayer MoSe2 on Epitaxial Gd2O3 Thin Films. Kritika Ghosh, A. Fissel, H. J. Osten, and Ayan Roy Chaudhuri. ACS Appl. Opt. Mater. (2024) 10.1021/acsaom.3c00397

Non-stoichiometric WO3-x-based nanoscale memristor for high-density memory. Krishna Rudrapal, Sourav Das, Rabaya Basori, Pallab Banerji, Venimadhav Adyam, Ayan Roy Chaudhuri. AIP Advances 13(8), 085011 (2023) 10.1063/5.0161638

Structural origin of room-temperature ferroelectricity in spark-plasma sintered DyCrO3 and LaCrO3. Suryakanta Mishra, Keerthana, Krishna Rudrapal, Biswajit Jana, Kazi Parvez Islam, Archna Sagdeo, Ayan Roy Chaudhuri, Venimadhav Adyam, and Debraj Choudhury. Phys. Rev. B 107, 214104 (2023) 10.1103/PhysRevB.107.214104

Tuning resistive switching properties of WO3- x- memristors by oxygen vacancy engineering for neuromorphic and memory storage applications. Krishna Rudrapal, Maitreyo Biswas, Biswajit Jana, V Adyam and Ayan Roy Chaudhuri. J. Phys. D: Appl. Phys. 56 205302. 10.1088/1361-6463/acc258

Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles. Kritika Ghosh, Avijit Dhara, Sajal Dhara, A. Fissel, H. J. Osten, and Ayan Roy Chaudhuri. ACS Appl. Nano Mater. 2022, 5, 9567−9575.
10.1021/acsanm.2c01767

Forming-Free, Self-Compliance, Bipolar Multi-Level Resistive Switching in WO3–x Based MIM Device. Krishna Rudrapal, Gourab Bhattacharya, Venimadhav Adyam, Ayan Roy Chaudhuri. Adv. Electron. Mater. 2022, 2200250.
https://doi.org/10.1002/aelm.202200250

Nitrogen doped In2O3–ZnO nanocomposite mesoporous thin film based highly sensitive and selective ethanol sensors. P. K. Shihabudeen, Ayan Roy Chaudhuri. Nanoscale,2022, Advance Article.
https://doi.org/10.1039/D2NR00455K

Nitrogen incorporated zinc oxide thin film for efficient ethanol detection. P. K. Shihabudeen, Mina Yaghoobi Notash, Jaber Jahanbin Sardroodi, Ayan Roy Chaudhuri. Sensors and Actuators B, 358, 131544 (2022). https://doi.org/10.1016/j.snb.2022.131544

Recent Progress in Flexible Multiferroics. Biswajit Jana, Kritika Ghosh, Krishna Rudrapal, Pallavi Gaur, P. K. Shihabudeen and Ayan Roy Chaudhuri. Front. Phys.,9, 822005 (2022). https://doi.org/10.3389/fphy.2021.822005

Interfacial anisotropic exciton-polariton manifolds in ReS2. Devarshi Chakrabarty, Avijit Dhara, Kritika Ghosh, Aswini K Pattanayak, Shreyashi Mukherjee, Ayan Roy Chaudhuri, and Sajal Dhara. Optica 8, 1488-1494 (2021). https://doi.org/10.1364/OPTICA.435647

Observation of room-temperature ferroelectricity in spark-plasma sintered GdCrO3. Suryakanta Mishra, Keerthana, Krishna Rudrapal, Aminur Rahaman, Pratap Pal, Archna Sagdeo, Ranjit Mishra, Dinesh Topwal, Ayan Roy Chaudhuri, Venimadhav Adyam, and Debraj Choudhury. Phys. Rev. B 104, L180101 (2021) https://doi.org/10.1103/PhysRevB.104.L180101

Modulation of resistive switching properties of non-stoichiometric WO3−x based asymmetric MIM structure by interface barrier modification. Krishna Rudrapal, A Mukherjee, V. Adyam and Ayan Roy Chaudhuri. Journal of Applied Physics 129, 235302 (2021) https://doi.org/10.1063/5.0053511

Ethanol sensing properties of nitrogen doped In2O3 thin films. P. K. Shihabudeen, Ayan Roy Chaudhuri, Journal of Materials Research (2021) https://doi.org/10.1557/s43578-021-00232-3

Toward an Enhanced Room-Temperature Photovoltaic Effect in Ferroelectric Bismuth and Iron Co doped BaTiO3. Pratap Pal, Krishna Rudrapal, Priyanka Maji, Ayan Roy Chaudhuri, and Debraj Choudhury,The Journal of Physical Chemistry C , 125 (9), 5315-5326 (2021)

Engineering room-temperature multiferroicity in Bi and Fe codoped BaTiO3. Pal P., Pramanick T. , Rudrapal K. , Majumder S. , Yadav S. , Mahana S. , Topwal D. , Choudhary R. , Singh K. , Roy Chaudhuri A. , Choudhury D. Applied Physics Letters 117 012901- (2020)

Improving ethanol sensing characteristics of indium oxide thin films by nitrogen incorporation. Shihabudeen P., Roy Chaudhuri A. Sensors & Actuators: B. Chemical 305 127523- (2020)

K+ and Mg2+ co-doped bipolar Na3V2(PO4)3: An ultrafast electrode for symmetric sodium ion full cell. Das A., Basu Majumder S. , Roy Chaudhuri A. Journal of Power Sources 461 228149- (2020)

Origin and tuning of room-temperature multiferroicity in Fe-doped BaTiO3. Pal P., Rudrapal K. , Mahana S. , Yadav S. , Paramanik T. , Mishra S. , Singh K. , Sheet G. , Topwal D. , Chaudhuri A. R., Choudhury D. Physical Review B 101 064409- (2020)

Superior optical ( 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si0.5Ge0.5/Si substrates using molecular beam epitaxy by Singh S., Katiyar A. K., Sarkar A. , Shihabudeen P. , Roy Chaudhuri A. , Goswami D. K., Ray S. K. Nanotechnology 31 115206- (2020)

Growth and Dielectric Properties of Monoclinic Gd2O3 on Si(001) by Gribisch P., Roy Chaudhuri A. , Fissel A. ECS Transactions 93 57-60 (2019)

Hydrogen sensing characteristics of perovskite based calcium doped BiFeO3 thin films by Bala A., Majumder S. B., Dewan M. , Roy Chaudhuri A. International Journal of Hydrogen Energy 44 18648-18656 (2019)

Improving electrochemical performance of Li-S rechargeable cell by cathode composition modification by Singh L. K., Majumder S. B., Roy Chaudhuri A. Materials Letters 227 176-178 (2018)

Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation by Roy Chaudhuri A., Fissel A. , Osten H. Journal of Materials Research 32 699-716 (2017)

Impact of boron on the step-free area formation on Si (111) mesa structures by Ayan Roy Chaudhuri, H. J. Osten, A. Fissel Journal of Applied Physics 118 - (2015)

Impact of surface phase coexistence on the development of step-free areas on Si(111). Andreas Fissel, Ayan Roy Chaudhuri, Jan Krügener, Philipp Gribisch, H. Jörg Osten Frontiers of Materials Science 9 - (2015)

Influence of 1x1- (7x7) phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si(111) by Andreas Fissel, Ayan Roy Chaudhuri, Jan Krügener, H. Jorg Osten Journal of Crystal Growth 425 - (2015)

Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3 thin films on Si. Ayan Roy Chaudhuri, A. Fissel and H. Jörg Osten Physica Status Solidi C 11 - (2014)

Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100) by Ayan Roy Chaudhuri, A. Fissel and H. J. Osten Applied Physics Letters 104 - (2014)

The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric by P. Shekhter, Ayan Roy Chaudhuri, A. Laha, S. Yehezkel, A. Shriki, H. J. Osten and M. Eizenberg Applied Physics Letters 105 - (2014)

Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon (invited). H. Joerg Osten, Dominik Schwendt, Ayan Roy Chaudhuri, Andreas Fissel, Pini Shekhter and Moshe Eizenberg ECS Transactions 61 - (2014)

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. Ayan Roy Chaudhuri, A. Fissel, V. R. Archakam, H.-J. Osten Applied Physics Letters 102 - (2013)

Investigation of band offsets and dc leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si. Ayan Roy Chaudhuri, A. Fissel, H.-J. Osten Journal of Applied Physics 113 - (2013)

Role of domain walls in the abnormal photovoltaic effect in BiFeO3 by Akash Bhatnagar, Ayan Roy Chaudhuri, Young Heon Kim, Dietrich Hesse and Marin Alexe Nature Communications 4 - (2013)

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